gr 1000 m t1 7 d 1700 v sic mosfet 2018 mar. rev1 .1 http://www.genesicsemi.com silicon carbide power mosfet n-channel enhancement mode features ? 150 c maximum operating temperature ? high blocking voltage with low on-resistance ? low output capacitance and gate charge ? normally-off operation at all temperatures ? halogen free, rohs complaint advantages ? reduced switching losses and minimum gate ringing ? high system efficiency ? increased power density ? increased system switching frequency maximum ratings at t c = 25 c, unless otherwise specified parameter symbol drain - source voltage v dsmax gate - source voltage (dynamic) 1 v gsmax gate - source voltage (static) 2 v gsop operating junction and storage temperature t j , t stg electrical characteristics at t c = 25 c, unless otherwise specified reverse diode characteristics at t c = 25 c, unless otherwise specified parameter symbol diode forward voltage v sd continuous diode forward current i s parameter symbol drain - source breakdown voltage v (br)dss gate threshold voltage v gs(th) drain - source leakage current i dss gate - source leakage current i gss drain - source on-state resistance r ds(on) input capacitance c iss output capacitance c oss reverse transfer capacitance c rss http://www.genesicsemi.com /sic_transistors/mosfet/ mosfet p a ckage applications gate ringing ? advanced flyback converter topologies ? auxiliary power supplies ? switch mode power supplies (smps) ? high-voltage capacitive loads = 25 c, unless otherwise specified symbol conditions value dsmax v gs = 0 v, i d = 10 a 17 00 gsmax ac (f > 1 hz) - 10/+25 gsop static - 5/+20 stg - 55 to +150 = 25 c, unless otherwise specified = 25 c, unless otherwise specified symbol conditions value min. typical sd v gs = -4 v, i d = 1 a 3. v gs = -4 v, i d = 1 a, t j = 150 c 3. v gs = -4 v v ds i d @25 r ds(on) symbol conditions value min. typical (br)dss v gs = 0 v, i d = 10 a 1700 gs(th) v ds = v gs , i d = 5 ma v ds = v gs , i d = 5 ma , t j = 150 c 2. 1. dss v ds = 1700 v, v gs = 0 v 1 v ds = 1700 v, v gs = 0 v, t j = 150 c 5 gss v gs = 20 v, v ds = 0 v ds(on) v gs = 20 v, i d = 2 a v gs = 20 v, i d = 2 a, t j = 150 c 1000 1800 iss v gs = 0 v, v ds = 1000 v f = 1 mhz v ac = 25 mv 190 oss 1 0 rss 1.5 1 2 3 to - 247 - 3l page 1 of 1 advanced flyback converter topologies switch mode power supplies (smps) value unit 00 v 10/+25 v 5/+20 v 55 to +150 c value unit typical max. 8 v 3 4 a = 1700 v c = 6 a = 1000 m value unit typical max. v 2. 6 1. 8 v 1 a 5 100 na 1000 1800 m 190 pf 0 pf 1.5 pf
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